IMZ4T108
TRANS NPN/PNP 32V 0.5A 6SMTManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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The Rohm Semiconductor IMZ4T108 is a bipolar transistor array featuring one NPN and one PNP transistor in a single SMT6 package. This device offers a collector-emitter breakdown voltage of 32V and a maximum collector current of 500mA. It exhibits a DC current gain (hFE) of at least 120 at 100mA and 3V for the NPN and 30mA and 3V for the PNP, with transition frequencies of 250MHz and 200MHz respectively. The maximum power dissipation is 300mW, and it operates reliably up to a junction temperature of 150°C. The IMZ4T108 finds application in various electronic circuits, including consumer electronics and industrial automation. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 32V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 250MHz, 200MHz |
| Supplier Device Package | SMT6 |
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