IMX8T108
TRANS 2NPN 120V 0.05A 6SMTManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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Rohm Semiconductor's IMX8T108 is a dual NPN bipolar junction transistor (BJT) array designed for surface-mount applications. This component, housed in an SMT6 package (SC-74, SOT-457), offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of up to 50mA. With a transition frequency of 140MHz and a maximum power dissipation of 300mW, the IMX8T108 is suitable for general-purpose amplification and switching circuits. Key electrical characteristics include a minimum DC current gain (hFE) of 180 at 2mA, 6V, and a collector cutoff current of 500nA. The device operates at junction temperatures up to 150°C and is supplied in Tape & Reel packaging. This transistor array finds utility in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | SMT6 |