IMX4T108
TRANS 2NPN 20V 0.05A 6SMTManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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Rohm Semiconductor IMX4T108 is a dual NPN bipolar junction transistor (BJT) array designed for surface-mount applications. This component features a 20V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a transition frequency of 1.5GHz, it is suitable for high-speed switching and amplification circuits. The minimum DC current gain (hFE) is 56 at 10mA and 10V. The device offers a maximum power dissipation of 300mW and an operating junction temperature up to 150°C. Packaged in a compact SMT6 (SC-74, SOT-457) configuration, it is supplied on tape and reel. The IMX4T108 finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 20mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 10mA, 10V |
| Frequency - Transition | 1.5GHz |
| Supplier Device Package | SMT6 |
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