IMX1T108
TRANS 2NPN 50V 0.15A 6SMTManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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Rohm Semiconductor's IMX1T108 is a dual NPN bipolar junction transistor (BJT) array. This surface mount component, housed in an SMT6 (SC-74, SOT-457) package, offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 150mA. The device features a minimum DC current gain (hFE) of 120 at 1mA, 6V, and a transition frequency up to 180MHz. Maximum power dissipation is 300mW, with a collector cutoff current of 100nA. Saturation voltage (Vce(sat)) is a maximum of 400mV at 5mA, 50mA. The IMX1T108 is suitable for applications in consumer electronics and general-purpose amplification circuits, operating at temperatures up to 150°C. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | SMT6 |