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IMX17T108

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IMX17T108

TRANS 2NPN 50V 0.5A 6SMT

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays

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Rohm Semiconductor's IMX17T108 is a dual NPN bipolar junction transistor (BJT) array designed for surface mount applications. This SMT6 package component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. With a transition frequency of 250MHz and a minimum DC current gain of 120 at 100mA and 3V, it is suitable for various signal amplification and switching tasks. The device features a maximum power dissipation of 300mW and an operating junction temperature of 150°C. Key parameters include a collector cutoff current of 100nA (ICBO) and a Vce saturation of 600mV at 50mA/500mA. This component is commonly utilized in automotive and industrial electronics for its reliable performance. It is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Power - Max300mW
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 3V
Frequency - Transition250MHz
Supplier Device PackageSMT6

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