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IMT1AT108

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IMT1AT108

TRANS 2PNP 50V 0.15A 6SMT

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Rohm Semiconductor IMT1AT108 is a bipolar transistor array featuring two PNP transistors in a SMT6 package. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current handling capability of 150mA. With a transition frequency of 140MHz and a maximum power dissipation of 300mW, it is suitable for applications requiring compact, surface-mount solutions. The minimum DC current gain (hFE) is 120 at 1mA and 6V. The device exhibits a Vce saturation of 500mV maximum at 5mA base current and 50mA collector current. Operating junction temperature is rated up to 150°C. This component is commonly utilized in portable electronics and general-purpose switching applications. Packaged on tape and reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature150°C (TJ)
Power - Max300mW
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Frequency - Transition140MHz
Supplier Device PackageSMT6

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