IMT17T110
TRANS 2PNP 50V 0.5A 6SMTManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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Rohm Semiconductor IMT17T110 is a dual PNP bipolar junction transistor (BJT) array designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. With a transition frequency of 200MHz and a minimum DC current gain (hFE) of 120 at 100mA and 3V, it is suitable for various signal amplification and switching tasks. The device operates within a temperature range of 150°C (TJ) and has a maximum power dissipation of 300mW. The collector cutoff current is a maximum of 100nA (ICBO). This array is supplied in an SMT6 package, specifically SC-74, SOT-457, and is available on tape and reel (TR). The IMT17T110 finds application in consumer electronics, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SMT6 |
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