EMX5T2R
TRANS 2NPN 11V 0.05A 6EMTManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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Rohm Semiconductor EMX5T2R is a dual NPN bipolar junction transistor array designed for high-speed switching applications. Featuring a collector-emitter breakdown voltage of 11V and a maximum collector current of 50mA, this device offers a transition frequency of 3.2GHz, enabling efficient signal processing in demanding environments. The minimum DC current gain (hFE) is 56 at 5mA collector current and 10V collector-emitter voltage, with a Vce(sat) of 500mV at 5mA base current and 10mA collector current. The transistor array operates within a junction temperature range of -40°C to 150°C and is supplied in an EMT6 package, suitable for surface mounting. Typical applications include signal amplification and switching in consumer electronics and telecommunications infrastructure. The component is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 11V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 10V |
| Frequency - Transition | 3.2GHz |
| Supplier Device Package | EMT6 |
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