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EMX4T2R

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EMX4T2R

TRANS 2NPN 20V 0.05A 6EMT

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays

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Rohm Semiconductor EMX4T2R is a bipolar transistor array featuring two NPN transistors in a single EMT6 package, suitable for surface mount applications. This device offers a collector-emitter breakdown voltage of 20V and a maximum collector current of 50mA. The transition frequency reaches 1.5GHz, ensuring high-speed switching capabilities. With a minimum DC current gain (hFE) of 56 at 10mA collector current and 10V collector-emitter voltage, and a Vce saturation of 500mV at 4mA base current and 20mA collector current, it provides efficient amplification and switching. The maximum power dissipation is 150mW at an operating temperature of 150°C. The component is supplied in Tape & Reel (TR) packaging. This transistor array finds application in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Power - Max150mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 20mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 10mA, 10V
Frequency - Transition1.5GHz
Supplier Device PackageEMT6

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