EMT1FHAT2R
PNP+PNP GENERAL PURPOSE AMPLIFICManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Rohm Semiconductor EMT1FHAT2R is a dual PNP bipolar transistor array designed for general-purpose amplification. This AEC-Q101 qualified component offers two PNP transistors in a single SOT-563, SOT-666 package, suitable for surface mount applications. It features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 150mA. The device exhibits a transition frequency of 140MHz and a minimum DC current gain (hFE) of 120 at 1mA, 6V. Maximum power dissipation is 150mW, with a collector cutoff current of 100nA (ICBO). The saturation voltage (Vce(sat)) is a maximum of 500mV at 5mA, 50mA. Operating temperature range extends to 150°C (TJ). This component is supplied in Tape & Reel (TR) packaging and is commonly utilized in automotive electronics due to its grade and qualification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | EMT6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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