BA12004BF-E2
TRANS 7NPN DARL 60V 0.5A 16SOPManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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Rohm Semiconductor BA12004BF-E2 is a 7 NPN Darlington bipolar transistor array. This device features a collector-emitter breakdown voltage of 60V and a maximum collector current of 500mA. The minimum DC current gain (hFE) is 1000 at 350mA and 2V. The saturation voltage (Vce Sat) is a maximum of 1.6V at 500µA base current and 350mA collector current. With a maximum power dissipation of 620mW, this component is housed in a 16-SOP package suitable for surface mounting. The operating temperature range is -40°C to 85°C. This transistor array is commonly utilized in industrial automation, consumer electronics, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 7 NPN Darlington |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Power - Max | 620mW |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | 16-SOP |
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