UMH7NTR
TRANS 2NPN PREBIAS 0.15W UMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor's UMH7NTR is a pre-biased bipolar transistor array featuring two NPN transistors. This device, part of the UMT6 package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a power dissipation capability of 150mW, it includes an integrated base resistor of 4.7kOhms, simplifying circuit design. The saturation voltage (Vce Sat) is specified at 300mV at 250µA base current and 5mA collector current. The minimum DC current gain (hFE) is 100 at 1mA collector current and 5V Vce. This component is suitable for surface mounting and is supplied in tape and reel packaging. Applications include logic circuits and digital signal processing in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | UMT6 |
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