UMH6NTR
TRANS 2NPN PREBIAS 0.15W UMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Rohm Semiconductor UMH6NTR is a dual NPN pre-biased bipolar transistor array designed for surface mount applications. This component features two independent NPN transistors, each with integrated base resistors (R1 = 47kO) and emitter-base resistors (R2 = 47kO) for simplified circuit design and reduced component count. It offers a Collector-Emitter Voltage (Vce) of up to 50V and a continuous Collector Current (Ic) of 100mA. The device boasts a transition frequency (fT) of 250MHz, making it suitable for high-speed switching and amplification tasks. With a maximum power dissipation of 150mW and a saturation voltage (Vce(sat)) of 300mV at 500µA/10mA, the UMH6NTR is engineered for efficiency. The minimum DC current gain (hFE) is 68 at 5mA/5V. This component is supplied in the compact UMT6 package, commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | UMT6 |
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