UMF8NTR
TRANS NPN PREBIAS/NPN 0.15W UMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor UMF8NTR is a dual NPN bipolar transistor array featuring one pre-biased NPN and one general-purpose NPN. The pre-biased transistor includes integrated base resistors (R1 = 47kO) and emitter resistors (R2 = 47kO), simplifying circuit design and reducing component count. It is rated for a maximum collector current of 100mA and a collector-emitter breakdown voltage of 15V. The second NPN transistor offers a higher collector current capability of 500mA and a breakdown voltage of 50V. Both transistors exhibit a transition frequency of 250MHz. With a 150mW power dissipation, this UMT6 packaged device is suitable for surface mounting. This component finds application in compact switching and logic circuits across various electronic equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 NPN |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 15V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V / 270 @ 10mA, 2V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | UMT6 |
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