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UMF7NTR

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UMF7NTR

TRANS DIGITAL BJT NPN 12V/50V 50

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

The Rohm Semiconductor UMF7NTR is a bipolar transistor array featuring two NPN transistors. One transistor is pre-biased, simplifying circuit design. The array includes a 50V, 100mA NPN transistor with a transition frequency of 250MHz, and a 12V, 500mA NPN transistor with a transition frequency of 320MHz. Both devices are housed in a 6-TSSOP, SC-88, SOT-363 surface mount package, supplied on tape and reel. Key parameters include a maximum power dissipation of 150mW, a collector cutoff current of up to 500nA, and a saturation voltage of 300mV at 500µA/10mA for the first transistor and 250mV at 10mA/200mA for the second. Integrated base resistors of 2.2kOhms are present. This component is suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN Pre-Biased, 1 NPN
Power - Max150mW
Current - Collector (Ic) (Max)100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)50V, 12V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)500nA, 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 20mA, 5V / 270 @ 10mA, 2V
Frequency - Transition250MHz, 320MHz
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)2.2kOhms
Supplier Device PackageUMT6

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