UMF4NTR
TRANS NPN PREBIAS/PNP 0.15W UMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor UMF4NTR is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor within a compact UMT6 package. This device offers a 50V collector-emitter breakdown voltage for the NPN transistor and 12V for the PNP transistor. The UMF4NTR supports collector currents up to 100mA for the NPN and 500mA for the PNP, with a maximum power dissipation of 150mW. Transition frequencies are rated at 250MHz for the NPN and 260MHz for the PNP. Integrated base resistors of 2.2kOhms are included for both transistors. This component is commonly utilized in industrial automation, consumer electronics, and communication systems. The UMF4NTR is supplied in Tape & Reel (TR) packaging for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V / 270 @ 10mA, 2V |
| Frequency - Transition | 250MHz, 260MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 2.2kOhms |
| Supplier Device Package | UMT6 |
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