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Bipolar Transistor Arrays, Pre-Biased

UMF23NTR

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UMF23NTR

TRANS NPN PREBIAS/PNP 0.15W UMT6

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

The Rohm Semiconductor UMF23NTR is a dual bipolar transistor array featuring one NPN and one PNP pre-biased transistor in a UMT6 package. This surface mount component offers a collector-emitter breakdown voltage of 50V. The NPN transistor provides a maximum collector current of 100mA and a transition frequency of 250MHz, with a saturation voltage of 300mV at 500µA base current and 10mA collector current. The PNP transistor handles a maximum collector current of 150mA with a transition frequency of 140MHz, and a saturation voltage of 500mV at 5mA base current and 50mA collector current. Both transistors exhibit a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V Vce. Integrated base resistors of 10kOhms (R1) and emitter-base resistors of 10kOhms (R2) are included. This device is suitable for applications in consumer electronics and industrial automation. The UMF23NTR is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN Pre-Biased, 1 PNP
Power - Max150mW
Current - Collector (Ic) (Max)100mA, 150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Frequency - Transition250MHz, 140MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
Supplier Device PackageUMT6

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