UMF22NTR
TRANS DIGITAL BJT NPN 12V 500MA/Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor UMF22NTR is a dual NPN bipolar transistor array featuring pre-biased configurations. This device integrates two NPN transistors, one with internal base resistors (R1=10kO, R2=10kO). The transistors offer collector current capabilities of up to 500mA and 100mA, with breakdown voltages of 12V and 50V respectively. Transition frequencies are specified at 250MHz and 320MHz. Saturation voltages are 250mV at 10mA/200mA and 300mV at 500µA/10mA. DC current gain (hFE) is a minimum of 270 at 10mA/2V for one transistor and 30 at 5mA/5V for the other. Power dissipation is rated at 150mW. This component is supplied in a UMT6 package, suitable for surface mounting, and is delivered on tape and reel (TR). Applications include digital logic, switching, and signal amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 NPN |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 500mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V, 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA / 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO), 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 10mA, 2V / 30 @ 5mA, 5V |
| Frequency - Transition | 250MHz, 320MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | UMT6 |
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