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Bipolar Transistor Arrays, Pre-Biased

UMF20NTR

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UMF20NTR

TRANS DIGITAL BJT NPN 50V 150MA/

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays, Pre-Biased

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Rohm Semiconductor UMF20NTR is a dual NPN bipolar transistor array featuring pre-biased configurations. This device integrates two independent NPN transistors within a single UMT6 package, suitable for surface mount applications. One transistor is pre-biased with integrated base resistors (R1 = 47kO, R2 = 47kO) for simplified circuit design. The transistors offer a collector-emitter breakdown voltage of 50V. Key electrical specifications include collector currents (Ic) up to 100mA and 150mA, collector cutoff currents (ICBO) of 500nA and 100nA respectively, and transition frequencies (fT) of 250MHz and 180MHz. Maximum power dissipation is 150mW. Applications include digital logic, switching circuits, and signal amplification in consumer electronics, industrial automation, and communication systems. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN Pre-Biased, 1 NPN
Power - Max150mW
Current - Collector (Ic) (Max)100mA, 150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500nA, 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 20mA, 5V / 180 @ 1mA, 6V
Frequency - Transition250MHz, 180MHz
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageUMT6

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