UMB9NTN
TRANS PREBIAS DUAL PNP UMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Rohm Semiconductor UMB9NTN is a dual PNP pre-biased bipolar junction transistor (BJT) housed in a compact UMT6 surface mount package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 150mW, it is suitable for applications requiring efficient switching and amplification. The integrated bias resistors, R1 at 10kOhms and R2 at 47kOhms, simplify circuit design and reduce component count. The device exhibits a typical saturation voltage of 300mV at 250µA base current and 5mA collector current, with a minimum DC current gain (hFE) of 68 at 5mA collector current and 5V collector-emitter voltage. This transistor array is commonly employed in industrial automation, consumer electronics, and communication systems. Supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | UMT6 |
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