UMB8NTR
TRANS PREBIAS DUAL PNP UMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Rohm Semiconductor UMB8NTR is a dual PNP pre-biased bipolar transistor designed for surface mount applications. This component features two PNP transistors integrated within a UMT6 package, offering a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. Its transition frequency reaches 250MHz, with a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V collector-emitter voltage. The device includes a 10kOhm base resistor (R1). Typical saturation voltage is 300mV at 1mA base current and 10mA collector current. With a maximum power dissipation of 150mW, the UMB8NTR is commonly utilized in consumer electronics and industrial control systems. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | UMT6 |
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