UMB1NTN
TRANS PREBIAS DUAL PNP UMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Rohm Semiconductor UMB1NTN is a dual PNP pre-biased bipolar transistor array in an UMT6 package. This surface mount component features two PNP transistors, each with integrated base resistors (R1 = 22kO) and emitter-base resistors (R2 = 22kO), simplifying circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device exhibits a minimum DC current gain (hFE) of 56 at 5mA collector current and 5V Vce. With a maximum power dissipation of 150mW and a collector cutoff current of 500nA, the UMB1NTN is suitable for applications in consumer electronics and industrial automation. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | UMT6 |
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