IMH5AT108
TRANS PREBIAS DUAL NPN SMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor IMH5AT108 is a dual NPN pre-biased bipolar transistor. This surface mount device, packaged in an SMT6 (SC-74, SOT-457), offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. The transistor features integrated base resistors (R1 = 22kOhms) and emitter base resistors (R2 = 22kOhms), simplifying circuit design. With a transition frequency of 250MHz and a minimum DC current gain (hFE) of 56 at 5mA and 5V, it is suitable for applications requiring fast switching and signal amplification. The maximum power dissipation is 300mW. This component is commonly utilized in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SMT6 |
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