IMH24T110
TRANS PREBIAS 2NPN 20V SC74Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor IMH24T110 is a pre-biased bipolar transistor featuring a dual NPN configuration within an SMT6 package (SC-74, SOT-457). This device offers a collector-emitter breakdown voltage of 20V and a maximum collector current of 600mA. The integrated base resistors provide a minimum DC current gain (hFE) of 820 at 50mA and 5V, with a typical saturation voltage of 150mV at 50mA collector current and 2.5mA base current. The transition frequency for this component is 150MHz, and it has a maximum power dissipation of 300mW. The IMH24T110 is supplied on tape and reel. This component is commonly utilized in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 50mA, 2.5mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 50mA, 5V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SMT6 |
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