IMH15AT110
TRANS PREBIAS DUAL NPN SMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor IMH15AT110. This is a Dual NPN Pre-Biased Bipolar Transistor (BJT) housed in an SMT6 package (SC-74, SOT-457). It features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V collector-emitter voltage. The transition frequency is specified at 250MHz, with a power dissipation rating of 300mW. Each transistor includes an integrated base resistor (R1) of 47kOhms. This component is suitable for surface mount applications and is supplied on tape and reel. The IMH15AT110 finds application in various electronic circuits, including digital logic, signal amplification, and switching functions across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SMT6 |
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