IMD8AT108
TRANS NPN/PNP PREBIAS 0.3W SMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor IMD8AT108 is a dual, pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SMT6 package. This device offers a collector current of 100mA and a collector-emitter breakdown voltage of 50V. The integrated base resistors, specifically a 47kO for the NPN section, provide a pre-defined bias condition, simplifying circuit design and reducing component count. With a maximum power dissipation of 300mW and a Vce(sat) of 300mV at 500µA/5mA, this transistor array is suitable for applications requiring low power consumption and compact footprints. It is commonly utilized in consumer electronics, industrial control systems, and automotive applications where efficient signal switching and level shifting are critical. The IMD8AT108 is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SMT6 |
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