IMD23T108
TRANS PREBIAS NPN/PNP 50V SC74Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Rohm Semiconductor IMD23T108 is a dual pre-biased bipolar transistor featuring a 1 NPN and 1 PNP configuration within an SMT6 (SC-74, SOT-457) package. This device operates with a collector-emitter breakdown voltage of 50V. The NPN transistor offers a maximum collector current of 100mA and a transition frequency of 200MHz, with internal base resistors R1 at 1kOhms and R2 at 10kOhms. The PNP transistor supports a maximum collector current of 500mA and a transition frequency of 250MHz, featuring internal base resistors R1 at 10kOhms and R2 at 10kOhms. Both transistors exhibit a maximum power dissipation of 300mW and are supplied in Tape & Reel (TR) packaging. Typical applications include digital logic circuits and signal switching in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 2.5mA / 300mV @ 10mA, 500µA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V / 30 @ 5mA, 5V |
| Frequency - Transition | 200MHz, 250MHz |
| Resistor - Base (R1) | 1kOhms, 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms, 10kOhms |
| Supplier Device Package | SMT6 |
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