IMD1AT108
TRANS NPN/PNP PREBIAS 0.3W SMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Rohm Semiconductor IMD1AT108 is a dual pre-biased bipolar transistor, featuring one NPN and one PNP transistor in a single SMT6 package (SC-74, SOT-457). This component is designed for surface mounting and offers a collector current of up to 100mA and a collector-emitter breakdown voltage of 50V. With a transition frequency of 250MHz and a maximum power dissipation of 300mW, it provides a minimum DC current gain (hFE) of 100 at 1mA and 5V. The integrated base resistors are 22kOhms for the NPN transistor and unspecified for the PNP. This device is commonly utilized in consumer electronics and industrial automation applications where space-constrained circuit design and simplified component count are critical. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SMT6 |
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