IMD14T108
TRANS NPN/PNP PREBIAS 0.3W SMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor IMD14T108 is a dual pre-biased bipolar transistor featuring one NPN and one PNP element in a single SMT6 package (SC-74, SOT-457). This device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 250MHz and a power dissipation of 300mW, it is suitable for applications requiring compact and efficient switching. The integrated base resistors, R1 (220 Ohms) and R2 (10 kOhms), simplify circuit design and reduce component count. Typical DC current gain (hFE) is 82 at 100mA and 5V. Saturation voltage (Vce Sat) is a maximum of 300mV at 5mA base current and 100mA collector current. This component is commonly utilized in consumer electronics and industrial control systems. Supplied on Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 100mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 220Ohms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SMT6 |
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