IMB9AT110
TRANS PREBIAS DUAL PNP SMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Rohm Semiconductor's IMB9AT110 is a dual PNP pre-biased bipolar transistor designed for surface mount applications. This SMT6 package component features a collector current of 100mA and a transition frequency of 250MHz, with a maximum power dissipation of 300mW. The device includes integrated base resistors, R1 at 10kOhms and R2 at 47kOhms, facilitating simplified circuit design. Key electrical specifications include a collector-emitter breakdown voltage of 50V and a Vce saturation of 300mV at 250µA, 5mA. The minimum DC current gain (hFE) is 68 at 5mA, 5V, and the collector cutoff current is a maximum of 500nA. This component is commonly utilized in industrial automation, consumer electronics, and communication systems. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SMT6 |
Request a Quote
Clients Also Buy
UMH3NFHATN
NPN+NPN DIGITAL TRANSISTOR(WITH
EMB59T2R
PNP+PNP DIGITAL TRANSISTOR (WITH
UMA6NTR
TRANS PREBIAS DUAL PNP UMT5
