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Bipolar Transistor Arrays, Pre-Biased

IMB9AT110

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IMB9AT110

TRANS PREBIAS DUAL PNP SMT6

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Rohm Semiconductor's IMB9AT110 is a dual PNP pre-biased bipolar transistor designed for surface mount applications. This SMT6 package component features a collector current of 100mA and a transition frequency of 250MHz, with a maximum power dissipation of 300mW. The device includes integrated base resistors, R1 at 10kOhms and R2 at 47kOhms, facilitating simplified circuit design. Key electrical specifications include a collector-emitter breakdown voltage of 50V and a Vce saturation of 300mV at 250µA, 5mA. The minimum DC current gain (hFE) is 68 at 5mA, 5V, and the collector cutoff current is a maximum of 500nA. This component is commonly utilized in industrial automation, consumer electronics, and communication systems. The part is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce68 @ 5mA, 5V
Frequency - Transition250MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageSMT6

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