IMB7AT108
TRANS 2PNP PREBIAS 0.3W SOT457Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor IMB7AT108 is a dual PNP pre-biased bipolar transistor array. It features a collector current (Ic) of 100mA and a collector-emitter breakdown voltage (Vce) of 50V. The minimum DC current gain (hFE) is 100 at 1mA, 5V. This device offers a saturation voltage (Vce(sat)) of 300mV at 250µA, 5mA. Integrated base resistors of 4.7kOhms are included. The power dissipation is rated at 300mW. The IMB7AT108 is supplied in a SOT-457 package and is available on tape and reel. This component is commonly utilized in consumer electronics and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-457 |
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