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Bipolar Transistor Arrays, Pre-Biased

IMB5AT108

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IMB5AT108

TRANS PREBIAS 2PNP 50V SC74

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays, Pre-Biased

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Rohm Semiconductor's IMB5AT108 is a dual PNP pre-biased bipolar junction transistor (BJT) housed in an SMT6 package, equivalent to SC-74 or SOT-457. This device features integrated base resistors, providing a fixed bias for simplified circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 30mA. The minimum DC current gain (hFE) is specified as 56 at 5mA collector current and 5V collector-emitter voltage. The internal base resistors are rated at 22kOhms for both R1 and R2. This component is commonly utilized in industrial, automotive, and consumer electronics applications requiring controlled switching or amplification with minimal external components. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max-
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 5mA, 5V
Frequency - Transition-
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
Supplier Device PackageSMT6

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