IMB4AT110
TRANS PREBIAS DUAL PNP SMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor's IMB4AT110 is a dual PNP pre-biased bipolar transistor designed for surface mounting. This component features a collector current (Ic) of up to 100mA and a transition frequency (fT) of 250MHz. The device offers a minimum DC current gain (hFE) of 100 at 1mA and 5V, with a Vce saturation of 300mV at 1mA/10mA. Its collector-emitter breakdown voltage (Vce(max)) is rated at 50V, and it can dissipate a maximum power of 300mW. The internal base resistor (R1) is 10kOhms. The IMB4AT110 is supplied in an SMT6 package, specifically SC-74/SOT-457, and is available on tape and reel. This pre-biased transistor array is suitable for applications in industrial automation, consumer electronics, and communication systems requiring compact, high-performance switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SMT6 |