IMB1AT110
TRANS PREBIAS DUAL PNP SMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor's IMB1AT110 is a dual PNP pre-biased bipolar transistor array. This component, packaged in an SMT6 (SC-74, SOT-457) surface mount configuration, features a collector current capability of 100mA and a collector-emitter breakdown voltage of 50V. The device includes integrated base resistors of 22kOhms for both PNP transistors. Key specifications include a maximum power dissipation of 300mW, a saturation voltage (Vce(sat)) of 300mV at 500µA/10mA, and a minimum DC current gain (hFE) of 56 at 5mA/5V. The IMB1AT110 is suitable for applications in industrial electronics and consumer devices requiring simplified biasing and component count reduction. This part is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SMT6 |
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