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IMB1AT110

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IMB1AT110

TRANS PREBIAS DUAL PNP SMT6

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Rohm Semiconductor's IMB1AT110 is a dual PNP pre-biased bipolar transistor array. This component, packaged in an SMT6 (SC-74, SOT-457) surface mount configuration, features a collector current capability of 100mA and a collector-emitter breakdown voltage of 50V. The device includes integrated base resistors of 22kOhms for both PNP transistors. Key specifications include a maximum power dissipation of 300mW, a saturation voltage (Vce(sat)) of 300mV at 500µA/10mA, and a minimum DC current gain (hFE) of 56 at 5mA/5V. The IMB1AT110 is suitable for applications in industrial electronics and consumer devices requiring simplified biasing and component count reduction. This part is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 5mA, 5V
Frequency - Transition-
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
Supplier Device PackageSMT6

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