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FMG9AT248

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FMG9AT248

TRANS 2NPN PREBIAS 0.3W SMT5

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

The Rohm Semiconductor FMG9AT248 is a pre-biased bipolar transistor array featuring two NPN transistors in a single SMT5 package. This component offers a collector-emitter breakdown voltage (Vce) of 50V and a continuous collector current (Ic) capability of 100mA. With a transition frequency (Ft) of 250MHz, it is suitable for high-frequency applications. The device includes built-in base resistors (R1 and R2) of 10kOhms each, simplifying circuit design and reducing component count. Its maximum power dissipation is rated at 300mW. The FMG9AT248 exhibits a typical DC current gain (hFE) of 30 at 5mA collector current and 5V Vce. Saturation voltage (Vce(sat)) is a maximum of 300mV at 500µA base current and 10mA collector current. This surface mount device, packaged in SC-74A/SOT-753, is supplied on tape and reel and is commonly utilized in industrial control, consumer electronics, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74A, SOT-753
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Frequency - Transition250MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
Supplier Device PackageSMT5

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