FMG5AT148
TRANS 2NPN PREBIAS 0.3W SMT5Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor's FMG5AT148 is a dual NPN pre-biased bipolar transistor array designed for surface mount applications. This SMT5 packaged component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 300mW, it is suitable for applications requiring compact signal amplification and switching. The integrated base resistors, R1 at 10kOhms and R2 at 47kOhms, simplify circuit design by eliminating the need for external biasing components. This device is commonly utilized in consumer electronics and industrial control systems where space and component count are critical considerations. The FMG5AT148 offers a minimum DC current gain (hFE) of 68 at 5mA and 5V, with a collector cutoff current (Ic) not exceeding 500nA. Saturation voltage (Vce Sat) is specified at 300mV maximum for an input current of 250µA and collector current of 5mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74A, SOT-753 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SMT5 |
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