EMH2FHAT2R
NPN+NPN DIGITAL TRANSISTOR (CORRManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor EMH2FHAT2R is a dual NPN pre-biased bipolar transistor array. This device features two NPN transistors, each with integrated base resistors (R1 = 47kO) and emitter base resistors (R2 = 47kO), simplifying circuit design and reducing component count. With a collector-emitter breakdown voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA, it is suitable for applications requiring moderate current handling. The transition frequency (fT) of 250MHz allows for operation in moderately high-speed switching applications. The device dissipates a maximum power of 150mW and has a saturation voltage (Vce(sat)) of 300mV at 500µA base current and 10mA collector current. Qualified to AEC-Q101 and designed for automotive applications, it is supplied in a surface mount SOT-563/SOT-666 package (EMT6) on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | EMT6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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