EMH10FHAT2R
NPN+NPN DIGITAL TRANSISTOR (CORRManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor EMH10FHAT2R is a dual NPN pre-biased bipolar transistor array. This surface mount component, housed in an EMT6 package (SOT-563, SOT-666), features integrated base resistors (R1 = 2.2kO, R2 = 47kO) for simplified circuit design. It offers a collector current (Ic) of up to 100mA and a transition frequency of 250MHz. The device exhibits a minimum DC current gain (hFE) of 80 at 10mA, 5V, and a Vce(sat) of 300mV at 250µA, 5mA. Qualified to AEC-Q101 automotive standards, the EMH10FHAT2R is designed for applications requiring efficient switching and signal amplification in automotive systems, industrial control, and consumer electronics. The component is supplied on tape and reel (TR) with a maximum power dissipation of 150mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | EMT6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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