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Bipolar Transistor Arrays, Pre-Biased

EMF8T2R

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EMF8T2R

TRANS NPN PREBIAS/NPN 0.15W EMT6

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays, Pre-Biased

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The Rohm Semiconductor EMF8T2R is a versatile dual bipolar transistor array featuring one pre-biased NPN transistor and one standard NPN transistor, housed in an EMT6 package for surface mounting. This component offers distinct performance characteristics for each transistor element. The pre-biased NPN provides a typical DC current gain (hFE) of 68 at 5mA, 5V with an integrated 47kO base resistor, and is rated for 50V collector-emitter breakdown voltage and 100mA collector current. The second NPN transistor offers a higher DC current gain of 270 at 10mA, 2V, with a 12V collector-emitter breakdown voltage and a 500mA collector current capability. Both transistors exhibit transition frequencies of 250MHz and 320MHz respectively, with maximum power dissipation of 150mW. Saturation voltages are specified at 300mV for the pre-biased NPN and 250mV for the standard NPN under relevant bias conditions. This component is suitable for applications in industrial automation, consumer electronics, and automotive systems requiring compact and efficient transistor solutions. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type1 NPN Pre-Biased, 1 NPN
Power - Max150mW
Current - Collector (Ic) (Max)100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)50V, 12V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce68 @ 5mA, 5V / 270 @ 10mA, 2V
Frequency - Transition250MHz, 320MHz
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageEMT6

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