EMF7T2R
TRANS DIGITAL BJT NPN 12V 500MA/Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor EMF7T2R is a dual NPN transistor array featuring one pre-biased NPN and one general-purpose NPN transistor. The pre-biased transistor offers integrated base resistors (R1=2.2kO, R2=2.2kO) for simplified circuit design. The general-purpose NPN transistor provides a collector current of up to 500mA with a Vce(sat) of 250mV at 10mA/200mA, and a transition frequency of 320MHz. The pre-biased NPN transistor supports up to 100mA collector current with a Vce(sat) of 300mV at 500µA/10mA and a transition frequency of 250MHz. Both transistors exhibit a maximum collector emitter breakdown voltage of 50V and 12V respectively. This component, supplied in an EMT6 package on tape and reel, is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 NPN |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA, 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V / 270 @ 10mA, 2V |
| Frequency - Transition | 250MHz, 320MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 2.2kOhms |
| Supplier Device Package | EMT6 |
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