EMF4T2R
TRANS DIGITAL BJT NPN/PNP 12V 10Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor EMF4T2R is a bipolar transistor array featuring one NPN and one PNP pre-biased transistor. This device offers a 50V collector-emitter breakdown voltage for the NPN and 12V for the PNP. The NPN transistor supports a maximum collector current (Ic) of 100mA with a transition frequency (fT) of 250MHz, while the PNP transistor handles up to 500mA with an fT of 260MHz. Typical DC current gain (hFE) is 20 for the NPN at 20mA, 5V, and 270 for the PNP at 10mA, 2V. Each transistor is internally biased with a base resistor (R1) of 2.2kOhms and an emitter-base resistor (R2) of 2.2kOhms. Maximum power dissipation is 150mW per transistor. This component is supplied in an EMT6 package, suitable for SOT-563 and SOT-666 footprints, and is delivered on tape and reel. It finds application in various electronic systems including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN - Pre-Biased, 1 PNP |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA, 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V / 270 @ 10mA, 2V |
| Frequency - Transition | 250MHz, 260MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 2.2kOhms |
| Supplier Device Package | EMT6 |
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