EMF24T2R
TRANS NPN PREBIAS/NPN 0.15W EMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Rohm Semiconductor EMF24T2R is a pre-biased bipolar transistor array, featuring two NPN transistors within an EMT6 package. This component integrates one pre-biased NPN transistor and one standard NPN transistor, both designed for surface mounting. The standard NPN transistor offers a collector-emitter breakdown voltage of 50V, with collector currents up to 100mA and 150mA, and transition frequencies of 250MHz and 180MHz respectively. The pre-biased transistor includes integrated base resistors (R1 and R2) of 10kOhms. With a maximum power dissipation of 150mW, this device is suitable for applications in consumer electronics and industrial automation. The EMF24T2R is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 NPN |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA, 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 180 @ 1mA, 6V |
| Frequency - Transition | 250MHz, 180MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | EMT6 |
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