EMF21T2R
TRANS NPN PREBIAS/PNP 0.15W EMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Rohm Semiconductor EMF21T2R is a compact, pre-biased bipolar transistor array featuring one NPN and one PNP transistor within an EMT6 (SOT-563/SOT-666) surface mount package. This device offers a collector current capability of up to 100mA for the NPN and 500mA for the PNP, with a maximum collector-emitter breakdown voltage of 50V and 12V respectively. Transition frequencies are rated at 250MHz and 260MHz. Integrated base resistors of 10kOhms (R1) and emitter base resistors of 10kOhms (R2) are included, simplifying circuit design and reducing component count. Typical applications include digital logic, signal switching, and general-purpose amplification in consumer electronics, industrial automation, and automotive systems. The device is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 270 @ 10mA, 2V |
| Frequency - Transition | 250MHz, 260MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | EMT6 |
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