Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays, Pre-Biased

EMF20T2R

Banner
productimage

EMF20T2R

TRANS DIGITAL BJT NPN 50V 150MA/

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

The Rohm Semiconductor EMF20T2R is a dual NPN bipolar transistor array featuring pre-biased configurations. This surface mount component, housed in an EMT6 package (SOT-563/SOT-666), offers distinct performance characteristics for its two internal transistors. One transistor is a pre-biased NPN type with an integrated 47kO base resistor (R1) and a 47kO emitter-base resistor (R2). The other is a standard NPN transistor. Both transistors are rated for a collector-emitter breakdown voltage of 50V. The pre-biased transistor supports a collector current (Ic) of up to 100mA with a saturation voltage (Vce(sat)) of 300mV at 500µA base current (Ib) and 10mA Ic. Its transition frequency (fT) is 250MHz. The standard NPN transistor handles up to 150mA Ic with a Vce(sat) of 400mV at 5mA Ib and 50mA Ic, and an fT of 180MHz. Both exhibit low collector cutoff current (ICBO) and a minimum DC current gain (hFE) of 20 at 20mA/5V and 180 at 1mA/6V respectively. With a maximum power dissipation of 150mW, this device is suitable for applications in consumer electronics and industrial control systems. The EMF20T2R is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type1 NPN Pre-Biased, 1 NPN
Power - Max150mW
Current - Collector (Ic) (Max)100mA, 150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500nA, 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 20mA, 5V / 180 @ 1mA, 6V
Frequency - Transition250MHz, 180MHz
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageEMT6

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
EMA2T2R

TRANS 2PNP PREBIAS 0.15W EMT5

product image
EMH53T2R

NPN+NPN DIGITAL TRANSISTOR(WITH

product image
UMA8NTR

TRANS PREBIAS DUAL PNP UMT5