EMF18T2R
TRANS DIGITAL BJT NPN/PNP 50V 10Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Rohm Semiconductor EMF18T2R is a pre-biased bipolar transistor array, featuring one NPN and one PNP transistor within an EMT6 package. This device offers a collector-emitter breakdown voltage of 50V. The NPN transistor provides a maximum collector current of 100mA with a transition frequency of 250MHz, while the PNP transistor supports up to 150mA with a 140MHz transition frequency. Both transistors are configured with internal base resistors (R1 = 47kOhms) and emitter-base resistors (R2 = 47kOhms), simplifying circuit design. The EMF18T2R is suitable for applications in consumer electronics and industrial control systems requiring efficient switching and signal amplification. It is supplied in a Tape & Reel (TR) package for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN - Pre-Biased, 1 PNP |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA, 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA, 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V / 180 @ 1mA, 6V |
| Frequency - Transition | 250MHz, 140MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | EMT6 |
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