EMD3FHAT2R
GENERAL PURPOSE (DUAL DIGITAL TRManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
The Rohm Semiconductor EMD3FHAT2R is a dual pre-biased bipolar transistor (BJT) featuring one NPN and one PNP configuration within an EMT6 package. This AEC-Q101 qualified component integrates internal base resistors, R1 and R2, both specified at 10kOhms, simplifying circuit design. It offers a collector-emitter breakdown voltage of 50V, a maximum collector current of 100mA, and a transition frequency of 250MHz. The power dissipation is 150mW. This device is suitable for surface mount applications and is supplied in a Tape & Reel configuration. The EMD3FHAT2R finds application in automotive electronics and general-purpose digital signal switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | EMT6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |