EMD30T2R
TRANS NPN/PNP PREBIAS 0.15W EMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Rohm Semiconductor EMD30T2R is a pre-biased bipolar transistor array featuring one PNP and one NPN transistor. This component offers collector-emitter breakdown voltages of 50V for the NPN and 30V for the PNP. The NPN transistor provides a minimum DC current gain (hFE) of 140 at 100mA and 2V, with a collector current (Ic) capability of up to 200mA and a transition frequency of 260MHz. The PNP transistor includes a 10kO base resistor (R1) and a 10kO emitter base resistor (R2), with an internal 1kO base resistor (R1) for the NPN. Saturation voltage (Vce) for the NPN is a maximum of 300mV at 500µA base current and 10mA collector current. With a maximum power dissipation of 150mW, this device is housed in an EMT6 surface mount package, supplied on tape and reel. It finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 PNP Pre-Biased, 1 NPN |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 30V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
| Frequency - Transition | 260MHz |
| Resistor - Base (R1) | 10kOhms, 1kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | EMT6 |
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