EMD2FHAT2R
PNP+NPN DIGITAL TRANSISTOR (CORRManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Rohm Semiconductor EMD2FHAT2R is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor within a single EMT6 package. This dual transistor configuration integrates base resistors, offering common emitter output. The device is qualified to AEC-Q101 standards, indicating suitability for automotive applications. Key specifications include a maximum collector current (Ic) of 100mA, a transition frequency (fT) of 250MHz, and a power dissipation of 150mW. The minimum DC current gain (hFE) is 56 at 5mA collector current and 5V Vce. The NPN transistor includes a 22kO base resistor, while the PNP transistor also has a 22kO base resistor. This component is designed for surface mounting, utilizing a SOT-563 or SOT-666 footprint and supplied in Tape & Reel packaging. Its integrated biasing simplifies circuit design for applications requiring compact, low-power switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | EMT6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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