EMB6T2R
TRANS 2PNP PREBIAS 0.15W EMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Rohm Semiconductor's EMB6T2R is a dual PNP pre-biased bipolar transistor array configured in an EMT6 package. This device features a collector current (Ic) of up to 30mA and a collector emitter breakdown voltage (Vce) of 50V. With a transition frequency of 250MHz and power dissipation of 150mW, the EMB6T2R is suitable for applications requiring efficient signal switching and amplification. The integrated base resistors (R1 and R2) are both specified at 47kOhms, simplifying circuit design. The device exhibits a minimum DC current gain (hFE) of 68 at 5mA, 5V and a Vce saturation of 300mV at 500µA, 10mA. This component is commonly utilized in consumer electronics and communication systems. The EMB6T2R is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | EMT6 |
Request a Quote
Clients Also Buy
EMA2T2R
TRANS 2PNP PREBIAS 0.15W EMT5
EMH53T2R
NPN+NPN DIGITAL TRANSISTOR(WITH
UMA8NTR
TRANS PREBIAS DUAL PNP UMT5
