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EMB3FHAT2R

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EMB3FHAT2R

PNP+PNP DIGITAL TRANSISTOR (CORR

Manufacturer: Rohm Semiconductor

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Rohm Semiconductor EMB3FHAT2R is a dual PNP pre-biased bipolar transistor array. This AEC-Q101 qualified component features two PNP transistors integrated within a single EMT6 package, designed for surface mount applications. Each transistor offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device exhibits a transition frequency of 250MHz and a minimum DC current gain (hFE) of 100 at 1mA, 5V. The integrated base resistors are 4.7kOhms, simplifying circuit design. The EMB3FHAT2R is suitable for automotive applications, providing a power dissipation of up to 150mW. The component is supplied on tape and reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max150mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Frequency - Transition250MHz
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)-
Supplier Device PackageEMT6
GradeAutomotive
QualificationAEC-Q101

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